8T SRAM with different type of sense amplifier / Idalailah Dayah

In this paper, it presents the 8T SRAM by using different type of sense amplifier which is voltage-mode sense amplifier (VMSA) and current-mode sense amplifier (CMSA) stored date. The objectives of this research is to identify which one of these sense amplifier has the most high speed, less delay, and low power dissipation and also has the smallest cell area in layout. Sense amplifiers are one of the most critical circuits in the periphery of CMOS memories. This plays an important role to reduce the overall sensing delay and voltage. Earlier voltage mode sense amplifiers are used to sense the date it sense the voltage difference at bit and bit lines bar but as the memory size increase the bit line and date line capacitances increases. The software that will use for simulation is SILVACO EDA which is Gateway and Expert for layout by using 0.18um technology. The results show that the CMSA has high speed which is has delay 36-46% performed better than VMSA, and low power dissipation is 5-15% compared to VMSA. But, VMSA has the better cell area where it has 31.50% smaller than CMSA and the DRC and LVS for both layouts is shows with no error and equivalent. All the objectives are achieved and it shows that the CMSA has more advantages compare to VMSA and it is suitable for high speed performance and low power circuitry.