Characterization of 50nm NMOSFET / Aziddin Azman

Azman, Aziddin (2009) Characterization of 50nm NMOSFET / Aziddin Azman. Degree thesis, Universiti Teknologi MARA (UiTM).

Abstract

This paper presents a detailed study of characteristic of 50nm MOSFET by using SILVACO TCAD tool. The gate length (L) is reducing into 50nm based on conventional 0.3µm NMOSFET. The result of performance between two structures is compared by using Atlas simulation. The analysis is focused on Id-Vg and Id-Vd characteristic on the two gate length as mentioned. ATHENA and ATLAS in SILVACO TCAD tool was used to construct and analyze the semiconductor device. The result has shown how the drain current increase steadily and improvement on threshold voltage by 50nm NMOS in comparison with 0.3µm technology.

Metadata

Item Type:	Thesis (Degree)
Creators:	Creators Email / ID Num. Azman, Aziddin 2006130613
Contributors:	Contribution Name Email / ID Num. Thesis advisor Sulaiman, Fuziah UNSPECIFIED
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Programme:	Bachelor of Electrical Engineering
Keywords:	50nm NMOS, simulation
Date:	2009
URI:	https://ir.uitm.edu.my/id/eprint/98603