Modeling and switching simulation tool of SiC-GTO / Mohd Shawal Jadin, Muhamad Zahim Sujod and Raja Mohd Taufika Raja Ismail

Jadin, Mohd Shawal and Sujod, Muhamad Zahim and Raja Ismail, Raja Mohd Taufika (2008) Modeling and switching simulation tool of SiC-GTO / Mohd Shawal Jadin, Muhamad Zahim Sujod and Raja Mohd Taufika Raja Ismail. Journal of Electrical and Electronic Systems and Research (JEESR), 1: 7. pp. 65-69. ISSN 1985-5389

Abstract

Power semiconductor devices such as Thyristor, GTO, IGBT and Power MOSFET become important devices in high voltage and high frequency power electronics applications. Recent development in power electronics has made power semiconductor devices larger and more complicated, and therefore, device simulation is necessary to predict their characteristics. From the fundamental equations of semiconductor devices, potential distribution and carrier concentrations can be solved using the Finite Element Method (FEM) [1]. Silicon Carbide (SiC) material has been utilized for power devices, in order to achieve fast switching time and low switching loss. In this study, we analyzed the physical constants and device characteristics of Silicon Gate Turn-off (Si-GTO) thyristor and SiC-GTO. We build a GTO model by set up the boundary conditions, dimensions and adapt a suitable doping profile into the device model. We also compare the switching waveforms of Si-GTO and SiC-GTO. Results show that turn-off time of SiC-GTO is decreased extremely. We use our simulation tools in running all the modeling and switching simulation process.

Metadata

Item Type: Article
Creators:
Creators
Email / ID Num.
Jadin, Mohd Shawal
shawal@ump.edu.my
Sujod, Muhamad Zahim
zahim@ump.edu.my
Raja Ismail, Raja Mohd Taufika
rajamohd@ ump.edu.my
Subjects: T Technology > TA Engineering. Civil engineering > Engineering mathematics. Engineering analysis > Finite element method
Divisions: Universiti Teknologi MARA, Shah Alam
Journal or Publication Title: Journal of Electrical and Electronic Systems and Research (JEESR)
UiTM Journal Collections: UiTM Journal > Journal of Electrical and Electronic Systems Research (JEESR)
ISSN: 1985-5389
Volume: 1
Page Range: pp. 65-69
Keywords: Silicon Carbide, Gate Turn-off Thyristor, Modeling Tool and Finite Element Method
Date: June 2008
URI: https://ir.uitm.edu.my/id/eprint/61850
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