Memristive behaviour of plasma treated titania thin films

This paper demonstrates the fabrication of based memristive device by sputtering method. Titania thin film was deposited on a glass substrate sandwiched with platinum layer as its metal electrode. The sputtered titania layer was exposed to argon plasma to create the oxygen vacancies that are needed to enhance the memristive behavior. In this work the plasma treatment time was varied for 5, 10, and 15 minutes. In order to analyze the surface TiO₂, we use scanning electron microscopy FESEM. We have also done the Raman measurement analyse phase structure of the titania layer. The reading I-V measurement was taken to analyze the memristive behavior at different plasma treatments. The current-voltage (I-V) was taken at loop 0 V to -5 V, -5 V to 5 V and 5 V to 0 V at every sample. We have observe that the sample with 5 and 15 minutes plasma treat at 1 hour and sample 10 minutes plasma treat at 30 minutes, exhibits better memristive compared before anneal process.