NBTI effects on circuit reliability performance of 4-bit Johnson counter based on different simulation configuration / M. F. Zainudin ...[et al.]

Negative-bias temperature instability (NBTI) has
become a serious circuit reliability concern as technology nodes
decrease to nanometer scales. This paper presents comprehensive
analyses of the NBTI effect on 4-bit Johnson Counter with a 16-
nm High Performance (HP) Predictive Technology Model (PTM).
The threshold voltage shift and delay degradation of Johnson
Counter are analyzed in the presence of NBTI degradation using
a MOSRA model based on different configuration of stress
measurement with different diffusion species. The threshold
voltage shift for the simulation with no circuit cut-off time is
higher than the simulation with circuit cut-off time. Not only that,
threshold voltage shift with atomic hydrogen species also shows
the highest compared to molecular hydrogen species. As a result,
simulations with no circuit cut-off time with atomic hydrogen
species contribute the highest NBTI degradation. The results show
that the main concern of NBTI degradation impact on the circuit
performance can increase the delay up to 15.31% and an average
power reduction of up to 13.31% in 10-year lifetime.