Lim, C. W. and Yam, F.K. and Tan, C.K. and A., Abdul Aziz and Z., Hassan
(2004)
Ohmic contacts properties Pd/Ag metallization scheme on P-type GaN / C. W. Lim … [et al.].
In: STSS 2004 : Sains Teknologi Jilid 1, 31 Mei – 1 Jun 2004, Hotel Vistana, Kuantan, Pahang.
Abstract
In this work, we report on the characteristics of Pd/Ag metallization scheme deposited using thermal evaporation for the formation of ohmic contacts to p-type GaN. The electrical behavior and thermal stability at different annea1ing temperatures (400DC - 800DC) were: investigated. Specific contact resistivity using transmission Line Method (TLM) and current voltage (J-V) measurements were investigated. The minimum specific contact resistivity of 3.9 Qcm2 achieved after annealing at SOODC for 6 minutes. Changes in tile surface morphology off the contacts were observed using Scanning Electron Microscopy (SEM).
Metadata
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Creators: | Creators Email / ID Num. Lim, C. W. UNSPECIFIED Yam, F.K. UNSPECIFIED Tan, C.K. UNSPECIFIED A., Abdul Aziz UNSPECIFIED Z., Hassan UNSPECIFIED |
| Subjects: | Q Science > QC Physics > Heat > Temperature Q Science > QC Physics > Electron T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics |
| Divisions: | Universiti Teknologi MARA, Pahang > Jengka Campus |
| Journal or Publication Title: | Sains Teknologi Jilid 1 |
| Event Title: | STSS 2004 : Sains Teknologi Jilid 1 |
| Event Dates: | 31 Mei – 1 Jun 2004 |
| Page Range: | pp. 245-249 |
| Keywords: | Ohmic contact, specific contact resistivity, surface morphology, transmission line method |
| Date: | 2004 |
| URI: | https://ir.uitm.edu.my/id/eprint/51193 |
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