Photoluminescence study of Porous Silicones (PS) doped with Copper (CU) / Nor Ashikin Othman

Porous silicon (PS) is a form of chemical element silicon that has introduced nano-porous holes in its microstructure, has a large surface to volume. PS composed of a high interconnection matrix of nanometer size silicon crystals and the pores structure of silicon is etched into the substrate in size of nano to micrometer produced by anodization, chemical stain etching, drying porous silicon, and another method. The electrochemical etching process that used in the research is to prepare samples of porous silicon (PS). Five samples are prepared. One of the samples used as a reference sample. The four PS doped with copper(Cu) using an immersion process. All samples are characterized by using Photoluminescence (PL) spectroscopy and Atomic Force Microscopy (AFM). From the PL spectroscopy result, the reference sample (undoped) is higher intensity than the doped sample. Between the four samples are doped with Cu, one of the samples is higher at 0.025% and the lowest sample at 0.020%. Additionally, the result AFM show that the grain size sample at 0.025% is small between the grain size at 0.020% is high. In conclusion, the wavelength of the PS doped with Cu has a red luminescence between 650-680nm. So when doped with the Cu give the best wavelength.