The effects of P and N scaling on PN-junction characteristic / Ain Zubaidah Maslihan

The wet oxidation process is chosen to grow the oxide layer on the wafer surface. It is because the wet oxidation process has a significantly higher oxidation rate than the dry oxidation process. The n-type wafer was doped with the p-type material semiconductor, which is Boron. The Boron was doped on the wafer surface with the different scales of p-type regions and n-type regions. The size of p-type regions are 4mm, 5mm, 6mm, 7mm, and 8mm. For n-type regions, the size remains constant, which is 6mm. The furnace temperature was set up to 1100°C during the all doping processes. Four Point Probe was used to measure the sheet resistance of the wafer. Then, current-voltage characteristic are measured for all the pn-junctions by using I-V measurement. The devices of the 4mm p-type material semiconductor and 6mm n-type material semiconductor showed the best results of the current-voltage characteristic.