Temperature dependent of photoluminescence spectroscopy on nanostructured porous silicon / Malissa Abdul Muttalib

Porous silicon nanostructure (PSN) has been formed by using electrochemical etching process. The samples were prepared at various etching time which are at 10, 20, 30 and 40 min that will give the different structure of porous silicon. The current density used in this research are J (60 mA/cm2 and 120 mA/cm2), with supply current, Is (106.03 mA and 212.06 mA), and supply voltage, V (lOOmV). During the process of electrochemical etching of metallic specimen, reduction and oxidation process (redox process) will take place. Oxidation process is defined as a process in which oxygen is caused to combine with the other molecules. The samples were characterized by using FE-SEM and PL spectrometer. The FE-SEM will show the structure of porous silicon at different etching time. The PL spectrometer will measure the time independent of nanostructured porous silicon.