Comparison study of lightly doped drain (LDD) and double diffused drain (DDD) to overcome hot carrier effect on 90nm CMOS devices: article

In this project, the analysis and the simulation of the comparison between lightly doped drain (LDD) and double diffused drain (DDD) were studied to overcome the hot carrier effect on 90nm CMOS devices. Silvaco TCAD is a tools that used to measure substrate current (Isub), gate current (Igate) and gate voltage (Vg), where Vg at Isub and Igate directly related to impact ionization that occurred during hot carrier effect in deep submicrometer MOSFET’s. The comparison will be make in order to know which method is the best to overcome hot carrier effect on 90nm CMOS devices. As a result, it can be conclude that LDD structure is better to overcome hot carrier effect on 90nm NMOS device, which Isub and Igate were reduce to 48.12 % and 79.67 % respectively, while on 90nm PMOS device, DDD structure is better which Isub and Igate were reduce to 88.17 % and 65.83 % respectively.