Simulation of breakdown voltage on NMOS transistor

The simulation of Breakdown Voltage of an NMOS transistor is investigated using Athena/Devedit/Atlas of SILVACO software. The doping profile is modified, resulting in change of breakdown voltage. The doping profiles of the drain drift region, the p channel region and the length of the drift region play an important role in determining the breakdown properties and on state resistances of these devices. The simple model is used in this simulation for determine the doping profile and drive-in diffusion at the drain that give impact to the breakdown voltage. The dependence of breakdown voltage is studied based on device and process simulation. The possible location of breakdown voltage is at n+-p junction. The profile doping is change based on the implant dose due to raising the breakdown, where is implantation dose proportional to implantation time. Currentvoltage (I-V) characteristics curves and structure that show the impact gent rate of device were obtained from the simulation. The structure has been simulated using a process simulator and device characteristics were obtained using a device simulator. The breakdown voltage in the range of 8.9V to 9.156V has been obtained from different drain implant dose and drain drive-in time.