Comparison study of lightly doped drain (LDD) and double diffused drain (DDD) to overcome hot carrier effect on 0.3um NMOS

Muhammad, Mohd Khairi (2009) Comparison study of lightly doped drain (LDD) and double diffused drain (DDD) to overcome hot carrier effect on 0.3um NMOS. [Student Project] (Unpublished)

Abstract

The aim of this project is to present the analysis and simulation of the comparison of Light Doped Drain (LDD) and Double Diffuse Drain (DDD) to overcome Hot Carrier Effect on 0.3um NMOS device. The project started with designing the NMOS device using the SILVACO TCAD simulation software.

Metadata

Item Type:	Student Project
Creators:	Creators Email / ID Num. Muhammad, Mohd Khairi UNSPECIFIED
Contributors:	Contribution Name Email / ID Num. Advisor Zoolfakar, Ahmad Sabirin UNSPECIFIED
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics > Applications of electronics T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics > Computer engineering. Computer hardware
Divisions:	Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Programme:	Bachelor of Electrical Engineering (Honours)
Keywords:	Light doped drain (LDD), Hot carrier effect, NMOS device, SILVACO TCAD simulation software
Date:	2009
URI:	https://ir.uitm.edu.my/id/eprint/122682