Study on fabrication of SiGe n-channel MOSFET

SiGe n-channel MOSFET is a new material used in making microchips for less expensive, high performance communications tools. Low energy consumption makes silicon germanium transistors a treasure for many people in microelectronics. This paper discuss about the developing of Si/SiGe in n-channel MOSFET. SiGe n-channel MOSFET is design for 0.44um channel length using SILVACO TCAD tools. The project involves in measurements of Id-Vd and Id-Vg characteristics which compare between the SiGe n-channel MOSFET and the conventional Si nchannel MOSFET. The result show that the SiGe n-channel MOSFET has better performance than the conventional Si n-channel MOSFET in terms of the electrical characteristics.