Study on fabrication of SiGe n-channel MOSFET

Jamalus, Nor Hapizah (2005) Study on fabrication of SiGe n-channel MOSFET. [Student Project] (Unpublished)

Abstract

SiGe n-channel MOSFET is a new material used in making microchips for less expensive, high performance communications tools. Low energy consumption makes silicon germanium transistors a treasure for many people in microelectronics. This paper discuss about the developing of Si/SiGe in n-channel MOSFET. SiGe n-channel MOSFET is design for 0.44um channel length using SILVACO TCAD tools. The project involves in measurements of Id-Vd and Id-Vg characteristics which compare between the SiGe n-channel MOSFET and the conventional Si nchannel MOSFET. The result show that the SiGe n-channel MOSFET has better performance than the conventional Si n-channel MOSFET in terms of the electrical characteristics.

Metadata

Item Type: Student Project
Creators:
Creators
Email / ID Num.
Jamalus, Nor Hapizah
2000127228
Contributors:
Contribution
Name
Email / ID Num.
Advisor
Abd Rasheid, Norulhuda
UNSPECIFIED
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Metal oxide semiconductors
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Programme: Bachelor of Engineering (Honors) in Electrical
Keywords: Silicon-Germanium (SiGe), MOSFET, SILVACO TCAD.
Date: 2005
URI: https://ir.uitm.edu.my/id/eprint/122479
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