Jamalus, Nor Hapizah
(2005)
Study on fabrication of SiGe n-channel MOSFET.
[Student Project]
(Unpublished)
Abstract
SiGe n-channel MOSFET is a new material used in making microchips for less expensive, high performance communications tools. Low energy consumption makes silicon germanium transistors a treasure for many people in microelectronics. This paper discuss about the developing of Si/SiGe in n-channel MOSFET. SiGe n-channel MOSFET is design for 0.44um channel length using SILVACO TCAD tools. The project involves in measurements of Id-Vd and Id-Vg characteristics which compare between the SiGe n-channel MOSFET and the conventional Si nchannel MOSFET. The result show that the SiGe n-channel MOSFET has better performance than the conventional Si n-channel MOSFET in terms of the electrical characteristics.
Metadata
Item Type: | Student Project |
---|---|
Creators: | Creators Email / ID Num. Jamalus, Nor Hapizah 2000127228 |
Contributors: | Contribution Name Email / ID Num. Advisor Abd Rasheid, Norulhuda UNSPECIFIED |
Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Metal oxide semiconductors |
Divisions: | Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering |
Programme: | Bachelor of Engineering (Honors) in Electrical |
Keywords: | Silicon-Germanium (SiGe), MOSFET, SILVACO TCAD. |
Date: | 2005 |
URI: | https://ir.uitm.edu.my/id/eprint/122479 |
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