Study on the effect of the polysilicon doping on the junction depth in the 65 nm structure

An analysis on the effect of the polysilicon doping on the junction depth in the 65 nm structure was conducted in this paper. Several parameters presented in the polysilicon doping process were investigated and the TonyPlot profile for the junction depth was developed to help understanding the polysilicon doping effect which is crucial to produce stable threshold voltage and also how some of these parameters have effect on the n++ sheet resistance. For this doping process, it was conducted using ion implantation technique with two type of impurities; phosphorus and arsenic on crystalline material. The cutline to extracting the junction depth at gate and source/drain in TonyPlot was done for investigation in dependence of the polysilicon doping profile. All simulations were done by using SILVACO.