Modelling a MOSFETs with varied channel length to perform a CMOS inverter circuit using spice

Abdullah, Noor Syahida (2004) Modelling a MOSFETs with varied channel length to perform a CMOS inverter circuit using spice. [Student Project] (Unpublished)

Abstract

This report describes the characteristics of n-channel enhancement-type and p-channel enhancement-type of MOS Field Effect Transistor (MOSFET) to perform a Complementary MOS (CMOS) inverter. This CMOS inverter will calculate the output of Voltage Transfer Characteristic (VTC) and Propagation Delay time. In order to allow this inverter to function properly, the ideal current - voltage characteristic of MOSFET has been examined using the MODEL description of PSpice. The analysis has been performed using various channel length from 0.35 microns to 3.5 microns. The simulated results from the PSpice agree with the theory.

Metadata

Item Type:	Student Project
Creators:	Creators Email / ID Num. Abdullah, Noor Syahida UNSPECIFIED
Contributors:	Contribution Name Email / ID Num. Advisor Abdul Rasheid, Norulhuda UNSPECIFIED
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics > Apparatus and materials
Divisions:	Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Programme:	Bachelor of Electrical Engineering (Hons.)
Keywords:	MOS field effect transistor, Voltage variation, CMOS
Date:	2004
URI:	https://ir.uitm.edu.my/id/eprint/115252