Comparison study of lightly doped drain (LDD) and double diffused drain (DDD) to overcome the hot carrier effect on 90nm CMOS device

The aim of this project is to present the analysis and simulation of the comparison of Lightly Doped Drain (LDD) and Double Diffused Drain (DDD) to overcome Hot Carrier Effect on 90nm CMOS device. From the previous research, it showed that LDD method is better compared to DDD method to overcome hot carrier effect on 0.3umNMOS. This continuous project is to make a comparison between LDD and DDD method for 90nmCMOS device. Silvaco TCAD is a tools that being used to do data analysis such as substrate current (Isub), gate current (Igate), and gate voltage (Vg). The comparison will be make in order to know which method is the best to overcome hot carrier effect on90nm CMOS device. The investigation is start with the LDD method to overcome the hot carrier effect. The LDD method is designing at Silvaco TCAD first and then analyzes the data needed. InLDD, two investigation are analyzed, that are specifically focusing on the concentration dose and implant energy, which on the nˉ region for NMOS and pˉ region for PMOS of the LDD structure. These investigations will produce the measurement of Isub and Igate, where directly related to the hot carrier effect. In DDD structure, Isub and Igate were measured only by varying the nˉ and pˉ concentration dose on NMOS and PMOS device respectively. The data collected, Isub, Igate and Vg will be analyzed. From the analysis, it can be conclude that both of the method can be use to overcome the hot carrier effect on90nmCMOS device. As a result, LDD structure is better to the overcome hot carrier effect on90nm NMOS device, which Isub and Igate were reduced to 48.12 %and 79.67%respectively, while on 90nm PMOS device, DDD structure is better which Isub and Igate were reduce to 88.17 % and 65.83 % respectively.