Performance analysis of a wideband LNA utilizing 0.18um technology with HBM ESD Protection: article / Nor Aida Nordin

Nordin, Nor Aida (2010) Performance analysis of a wideband LNA utilizing 0.18um technology with HBM ESD Protection: article / Nor Aida Nordin. pp. 1-8.

Abstract

This paper presents the performance analysis of wideband low noise amplifier (LNA) design circuits utilizing 0.18um CMOS technology. The objective of this performed analysis of a LNA design that need achieve sufficiently large gain and low noise figure, compare the design with other design, and to verify the effect of parameter Rf and L, to S-parameter. This LNA design was expected to achieve a peak power gain of 13.8 dB. Within the 3 dB bandwidth from 2.6 GHz to 6.6 GHz, the noise figure (NF) is in a range of 4.0 dB to 6.5 dB and the input reflection coefficient, Sn is below 13.0dB.The standard specification for LNA with bandwidth from 2.6GHz is ISDB. This usually used for digital audio and video broadcasting application. By using Cadence Virtuoso as an EDA tool as a simulation tool, the result are obtained. The simulation result had almost achieved the target and this analysis had performed successfully simulation.

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Item Type: Article
Creators:
Creators
Email / ID Num.
Nordin, Nor Aida
noraidanordin85@yahoo.com
Subjects: Q Science > QC Physics > Electricity and magnetism > Electricity > Electric discharge
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Page Range: pp. 1-8
Keywords: CMOS, Electrostatic discharge (ESD), low noise amplifier (LNA), wideband
Date: 2010
URI: https://ir.uitm.edu.my/id/eprint/105257
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