Investigation of doping techniques on the silicon based capacitor: article / Ahmad Akmalhakim Yaacob

This technical paper investigates the effect of doping techniques, type of dopant species and plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers were highly doped using either solid source (SS) or spin-on dopant (SOD) method. Three different diffusion temperatures were used in this experiment which are 900oC, 1000oC and 1050oC. Results show that the diffusion by spin-on dopant gives a higher capacitance density compared to diffusion by solid source and larger plate size would contribute to a larger capacitance value. In addition, the experiment also shows that ntype wafer heavily doped with phosphorus exhibits a higher capacitance density.