Investigation of doping techniques on the silicon based capacitor: article / Ahmad Akmalhakim Yaacob

Yaacob, Ahmad Akmalhakim (2010) Investigation of doping techniques on the silicon based capacitor: article / Ahmad Akmalhakim Yaacob. pp. 1-5.

Abstract

This technical paper investigates the effect of doping techniques, type of dopant species and plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers were highly doped using either solid source (SS) or spin-on dopant (SOD) method. Three different diffusion temperatures were used in this experiment which are 900oC, 1000oC and 1050oC. Results show that the diffusion by spin-on dopant gives a higher capacitance density compared to diffusion by solid source and larger plate size would contribute to a larger capacitance value. In addition, the experiment also shows that ntype wafer heavily doped with phosphorus exhibits a higher capacitance density.

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Item Type: Article
Creators:
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Yaacob, Ahmad Akmalhakim
akmalhakimy@gmail.com
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Applications of electric power
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Page Range: pp. 1-5
Keywords: Solid source, spin-on dopant, capacitance density, segregation, pile-up, heavily doped bulk substrate
Date: 2010
URI: https://ir.uitm.edu.my/id/eprint/105097
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