Yaacob, Ahmad Akmalhakim
(2010)
Investigation of doping techniques on the silicon based capacitor: article / Ahmad Akmalhakim Yaacob.
pp. 1-5.
Abstract
This technical paper investigates the effect of doping techniques, type of dopant species and plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers were highly doped using either solid source (SS) or spin-on dopant (SOD) method. Three different diffusion temperatures were used in this experiment which are 900oC, 1000oC and 1050oC. Results show that the diffusion by spin-on dopant gives a higher capacitance density compared to diffusion by solid source and larger plate size would contribute to a larger capacitance value. In addition, the experiment also shows that ntype wafer heavily doped with phosphorus exhibits a higher capacitance density.
Metadata
Item Type: | Article |
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Creators: | Creators Email / ID Num. Yaacob, Ahmad Akmalhakim akmalhakimy@gmail.com |
Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Applications of electric power |
Divisions: | Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering |
Page Range: | pp. 1-5 |
Keywords: | Solid source, spin-on dopant, capacitance density, segregation, pile-up, heavily doped bulk substrate |
Date: | 2010 |
URI: | https://ir.uitm.edu.my/id/eprint/105097 |