Fabrication and characterization of zinc oxide thin films at different annealing temperatures by sol-gel method / Norhafizah Abdul Ghani

Zinc Oxide (ZnO) thin films were deposited on silicon and glass substrate by sol-gel method using Zn(CH3C00)2.2H20 (Zinc Acetate) as a starting material. ZnO solution has been prepared by dissolving Zinc Acetate (ZnAc) in 2-Metoxyethanol and Monoethanolamine solution. ZnO thin films was prepared by depositing ZnO solution onto silicon and glass substrate by spin coating technique and annealed at various temperatures between 350°C to 500°C. The film growth process was characterized by using Scanning Electron Microscopy (SEM) and current-voltage (I-V) measurement method. Current-voltage (I-V) measurement study indicated resistivity of ZnO films decreases with increasing annealing temperature. The effect of ZnO thin films on the surface morphology and electrical properties with varying the annealing temperature was also studied. It was investigated that the grain size of ZnO becomes bigger and denser with higher annealing temperature up to 500°C.