Fabrication and characterization of 130nm NMOS using silvaco software / Mas Fezah Latib

This paper presents to find the sequence of dominance for factors that determine the performance of a 130nm technology NMOS transistor. Going to 130nm, requires a lot of changes in the fabrication technique. The supply and threshold voltages will have to continually scale to sustain performance increase, limit energy consumption, control power dissipation, and maintain reliability. ATHENA and ATLAS module of SILVACO software are the tools used in simulating the fabrication and also simulating the electrical performance of the transistors. The parameters under investigation were the threshold voltage (VTH) value, ID-VD and ID-Vg relationships. The data produced from the experiments were used to determine the sequence of dominance for the factors involved in the transistor's abovementioned characteristics. From the experimental results, it was shown that the dopant implantation dosage at the source/drain active area contribute the most in determining the Vth value and also for determining the Id-Vg relationship. This is followed by the dosage for V-M adjustment implantation, the dielectric thickness and lastly the dosage of the halo implantation. However, there is no clear pattern found in determining the Id-Vd relationship.