Correlation study between doping techniques towards diffusion rate and oxidation rate/ Habibah Zulkefle

Zulkefle, Habibah (2010) Correlation study between doping techniques towards diffusion rate and oxidation rate/ Habibah Zulkefle. Degree thesis, Universiti Teknologi MARA (UiTM).

Abstract

This paper is to investigate correlation between doping technique towards diffusion rate and oxide growth rate. There are two types of doping technique that has been investigated such as Solid Source, SS and Spin on Dopant, SOD. Four inches wafers were used to investigate the effects of doping technique towards diffusion rate and oxidation rate. The resistivity of silicon substrate is measured by using 4-point probe while the oxide thickness is measured by an Ellipsometer. From this experiment, it can be concluded that diffusion rate of Solid Source is about 86% better than Spin on Dopand. While the oxide growth of Solid Source, SS is 3.6% better than Spin on Dopant

Metadata

Item Type:	Thesis (Degree)
Creators:	Creators Email / ID Num. Zulkefle, Habibah UNSPECIFIED
Contributors:	Contribution Name Email / ID Num. Advisor Zoolfakar, Ahmad Sabirin UNSPECIFIED
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Metal oxide semiconductors
Divisions:	Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Programme:	Bachelor of Electrical Engineering (Honours)
Keywords:	Solid Source (SS), Spin on Dopant (SOD), concentration, resistivity, diffusion, oxide thickness
Date:	2010
URI:	https://ir.uitm.edu.my/id/eprint/102830