Abstract
This thesis presents the design of a digital Complementary Metal Oxide Semiconductor (CMOS) technology process of ring oscillator circuit. Full custom design flow is implemented in which the design starts with schematic entry followed by simulation for characterization purpose and validation. The IC layout of the ring oscillator is achieved along with the post layout simulation and layout verification. The designed ring oscillator is simulated to determine the functionality and performance. The design is using 0.5um CMOS technology by MIMOS Berhad and consists of five types of design. Furthermore, the MOSFETs’ W/L factor of the ring oscillator circuit also contributes to the characteristics improvement. Different value of MOSFETs widths affected the performance of delay and also noise margin. The important characteristic of ring oscillator circuit is delay and oscillation frequency. For future development, I have to develop the smaller number of delay with considering MOSFET’s W/L in order to get the faster performance of ring oscillator.
Metadata
Item Type: | Thesis (Degree) |
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Creators: | Creators Email / ID Num. Yusoff, Yusliza Mohd UNSPECIFIED |
Divisions: | Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering |
Programme: | Bachelor Degree in Electrical Engineering (Hons.) |
Date: | 2012 |
URI: | https://ir.uitm.edu.my/id/eprint/102662 |
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