Electrical properties of titanium dioxide thin films prepared by sol-gel method for solar cell application / Rismawati Johari

Titanium dioxide (TiC^) thin films were prepared by sol-gel method at various annealing temperatures and at different concentration of titanium (IV) isopropoxide. TiC>2 thin films have been deposited on silicon substrate by spin coating technique. In general, the preparation conditions of Ti02 thin films by a sol-gel process can strongly affect the surface morphology and electrical properties of the Ti02 thin films. The surface morphology and electrical properties were investigated by scanning electron microscopy (SEM) and current-voltage (I-V) measurement, respectively. The interconnected pores closed up during sintering process and the porosity is found to affect the resistivity of TiC>2 thin films and the concentration of titanium (IV) isopropoxide is also found affecting the resistivity. The resistivity increases when the concentration of titanium (IV) isopropoxide increases. The resistivity also increases with increase of annealing temperature.