Ohmic contact characteristic of nanostructured titanium dioxide thin films anneal at different temperatures / Mohd Azlan Mohamad Zainuddin

Mohamad Zainuddin, Mohd Azlan (2009) Ohmic contact characteristic of nanostructured titanium dioxide thin films anneal at different temperatures / Mohd Azlan Mohamad Zainuddin. Degree thesis, Universiti Teknologi MARA (UiTM).

Abstract

This paper studied on the ohmic contact characteristics of nanostructured TiO2 thin films anneal at different temperature. The preparation of TiO2 solution used the Titanium (IV) butoxide as a precursor at concentration of 0.2M. TiO2 thin films were prepared by spin-coating technique and derived sol onto glass substrate, followed by an annealing at temperatures ranging from 350◦C to 550◦C. The result will be analyse on the I-V characteristics and observed it to get the ohmic contact by using gold, platinum and palladium as a metal contact. The influence of the annealing temperature on the electrical, structural and surface morphology of the thin film were characterize by using the I-V measurements, scanning electron microscope (SEM) and atomic force microscope (AFM). Due to the observation in electrical measurement at 550oC, platinum is the best metal contact compared to gold and palladium. This ohmic contact was observed by looking at the capability of metal contact delivering the required current with no voltage drop between the semiconductor and the metal.

Metadata

Item Type: Thesis (Degree)
Creators:
Creators
Email / ID Num.
Mohamad Zainuddin, Mohd Azlan
UNSPECIFIED
Contributors:
Contribution
Name
Email / ID Num.
Thesis advisor
Mohd Saad, Puteri Sarah
UNSPECIFIED
Subjects: T Technology > TP Chemical technology > Titanium dioxide
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Programme: Bachelor of Electrical Engineering (Hons)
Keywords: TiO2 solution, photovoltaic cells, ohmic contact
Date: 2009
URI: https://ir.uitm.edu.my/id/eprint/98858
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