Abstract
Lead Titanate (PbTiOs) thin films derived from metal alkoxide precursor solution through sol-gel method were deposited onto silicon substrates by dip coating. These films were deposited at different withdrawal speeds and different immerse times. The films were then annealed at a fixed temperature of 650°C. The CV measurement and IV characterics were measured using LCR meter and solar simulator respectively. While the structural properties were studied using scanning electron microscope (SEM). From this study, it was found that electrical properties were influenced by the changes in withdrawal speeds and immerse times. The results show that the resistivity of the PbTiC>3 thin films decreases as the withdrawal speed increases. Increasing in immerse time result in low resistivity. This result is supported by surface morphology of the thin films which indicated that smaller grain size can be obtained with high immerse time and withdrawal speed.
Metadata
Item Type: | Thesis (Degree) |
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Creators: | Creators Email / ID Num. Amin Gol, Syarifah Hasnun Amin Gol UNSPECIFIED |
Contributors: | Contribution Name Email / ID Num. Thesis advisor Abu Bakar, Raudah UNSPECIFIED |
Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
Divisions: | Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering |
Programme: | Bachelor of Electrical Engineering (Hons.) Electronic |
Keywords: | Lead Titanate (PbTiOs), metal alkoxide, scanning electron microscope (SEM) |
Date: | 2009 |
URI: | https://ir.uitm.edu.my/id/eprint/98506 |
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