The effect of ZnO growth temperature on the memristive behaviour of Hybrid ZnO graphene thin film / Tengku Norazman Tengku Abd Aziz ...[et al.]

Hybrid ZnO-Graphene devices have revealed a
stable switching cycle compared to ZnO devices. They have
better memristive performance and are suitable in non-volatile
memory applications. Here, we report the effect of ZnO growth
temperature on the memristive effect of ZnO and hybrid ZnOGraphene thin films. We show the electrical, optical and
morphological properties of the devices using Thermal
Chemical Vapour Deposition (TCVD) and Water Bath methods.
The relationship between ZnO morphological structure and
carrier mobility is discussed. Additionally, the effect of
Graphene insertion is shown in the number of switching cycles.
It was found that the ZnO thin film deposited at 350˚C showed
high resistance ratio of about 3.17 due to the defects present in
the crystal structure. On the other hand, nanoparticles in 450˚C
and 550˚C samples resulted in thicker films that reduced the
memristive window to 1.9 and 2.6 respectively. Hybrid devices
exhibited increased stability at switching cycle 4 compared to
ZnO devices.