Characterization and fabrication of 90nm strained silicon PMOS using TCAD silvaco / M. A. Abd Hamid and F. Sulaiman

Abd Hamid, M. A. and Sulaiman, F. (2012) Characterization and fabrication of 90nm strained silicon PMOS using TCAD silvaco / M. A. Abd Hamid and F. Sulaiman. Journal of Electrical and Electronic Systems Research (JEESR), 5: 8. pp. 67-73. ISSN 1985-5389

Abstract

The paper focuses on the enhancement of conventional 90nm PMOS using graded silicon germanium layer (SiGe) within the channel and bulk of semiconductor. The performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was compared. A process simulation of Strained Silicon PMOS and its electrical characterization was done using Silvaco TCAD tool. The analysis focused on Id-Vg and Id-Vd characteristic, and hole mobility changes. With the Germanium concentration of 35%, the threshold voltage Vt for the strained Si and conventional PMOS is -0.228035V and - 0.437378V respectively. This indicates that the strained silicon had lower power consumption. In addition, the output characteristics obtained for Strain Silicon PMOS showed an improvement of the drain current as compared with conventional PMOS.

Metadata

Item Type: Article
Creators:
Creators
Email / ID Num.
Abd Hamid, M. A.
areep85@yahoo.com
Sulaiman, F.
fuziah807@salam.uitm.edu.my
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics > Apparatus and materials > Semiconductors
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Journal or Publication Title: Journal of Electrical and Electronic Systems Research (JEESR)
UiTM Journal Collections: UiTM Journal > Journal of Electrical and Electronic Systems Research (JEESR)
ISSN: 1985-5389
Volume: 5
Page Range: pp. 67-73
Keywords: Strain silicon, SiGe, PMOS devices, Simulation
Date: June 2012
URI: https://ir.uitm.edu.my/id/eprint/62925
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