The electrical and optical studies of graphene oxide doped pedot: pss thin film / Nur Afifah Sarkhan

A promising candidate for transparent conductive electrode materials is the thin film of poly(3,4-ethylenedioxythiophene)(polystyrene sulfonate) (PEDOT: PSS) and gra-phene oxide (GO) . Spin coating technique was used in this research to produce thin films from PEDOT: PSS / GO. Graphene oxide sheets have been spread uniformly in PEDOT: PSS aqueous solution. The fabricated PEDOT:PSS/GO thin films have demonstrated an outstanding electrical properties. The electrical conductivity of PE-DOT:PSS thin films have achieved 35.80 S/cm, which have been increased about 5 times when 5% of graphene oxide was added into the solution. This exceptional im-provement is attributed to the higher carrier mobility, because GO interacts with PE-DOT via π-π stacking and hydrogen bonding. The solution-processing of PE-DOT:PSS/GO was simplified in this experiment to promote the commercialization of economical flexible electronic devices. The best optical band gap is obtained from PEDOT:PSS/5%GO which is 4.37 eV. Electrical characterization of the Schottky di-odes device was performed using current–voltage (I–V) measurements. The Schottky diodes showed good rectifying behaviour. Fascinatingly, for 5% doping of GO, the Schottky diode showed the best diode characteristics with an ideality factor, η of 2.79 and barrier height, Фb 0.5949 eV compared with pristine PEDOT:PSS Schottky diode of 4.25 of ideality factor, η and barrier height of 0.4913 eV. The embedded GO in PEDOT:PSS improves the conductivity of thin films, as well as optical band gap which subsequently enhance its electrical performance in Schottky diode devices. Thus, PEDOT:PSS/5%GO shows better performance compared to pristine PE-DOT:PSS