Electrical properties and morphology microscopy of palladium (Pd) Schottky contact on P-type GaN / C. K. Tan … [et al.]

Tan, C. K. and Yam, F. K. and Lim, C. W. and A., Abdul. Aziz and Z., Hassan (2004) Electrical properties and morphology microscopy of palladium (Pd) Schottky contact on P-type GaN / C. K. Tan … [et al.]. In: STSS 2004: Sains Teknologi Jilid1, 31 Mei – 1 Jun 2004, Hotel Vistana, Kuantan, Pahang.


In this paper, we present the electrical, thermal, and morphological characteristics of Pd contacts to 'Mg-doped p-type GaN grown on sapphire substrate. Different annealing temperatures (300700°C) were investigated, as thermally stable metal-semiconductor contacts are essential for high quality devices. The barrier heights and leakage current of these contacts determined using current voltage (I-V) measurement were investigated. The surface morphology of the samples were assessed by Scanning Electron Microscopy (SEM) in which the change of structural property could significantly affect the performance of contacts. The experimental result revealed that the sample annealed at 400°C for 35 minutes was the optimum condition where the highest SBH (0.68 eV) with low leakage current (20 µA at -5V) was obtained.


Item Type: Conference or Workshop Item (Paper)
Email / ID Num.
Tan, C. K.
Yam, F. K.
Lim, C. W.
A., Abdul. Aziz
Z., Hassan
Subjects: Q Science > QC Physics > Heat > Temperature
Q Science > QD Chemistry > Inorganic chemistry > Metals
T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics > Apparatus and materials > Semiconductors
Divisions: Universiti Teknologi MARA, Pahang > Jengka Campus
Journal or Publication Title: Sains Teknologi Jilid1
Event Title: STSS 2004: Sains Teknologi Jilid1
Event Dates: 31 Mei – 1 Jun 2004
Page Range: pp. 239-244
Keywords: Leakage current, Schottky barrier height, Schottky contact, thermal annealing
Date: 2004
URI: https://ir.uitm.edu.my/id/eprint/51192
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