Hudeish, A. Y. and Abdul Aziz, A. and Hassan, Z.
(2004)
Gas sensitive al membarane on n-type gan schottky diode / A. Y Hudeish, A. Abdul Aziz and Z. Hassan.
In: STSS 2004 : SAINS TEKNOLOGI JILID 1, 31 MEI – 1 JUN 2004, HOTEL VISTANA, KUANTAN, PAHANG.
Abstract
In this work, we have studied and fabricated a new, simple and small-size N2 and H2 sensitive Aluminum (AI) membrane/semiconductor (Al/n-GaN) Schottky diode sensor. Experimental results revealed that, during the hydride or nitride formation process, the time response increased and enhanced with temperatures operation and the forward- currents is increased by the increase of temperature for air, nitrogen and hydrogen. It also demonstrates that the Schottky barrier height is indeed increased with increasing the temperatures for gases. Therefore, the studied device can be used in fabricating a high-performance hydrogen and nitrogen sensitive sensor.
Metadata
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Creators: | Creators Email / ID Num. Hudeish, A. Y. UNSPECIFIED Abdul Aziz, A. UNSPECIFIED Hassan, Z. UNSPECIFIED |
| Subjects: | Q Science > QC Physics > Heat > Temperature Q Science > QC Physics > Heat > High temperatures |
| Divisions: | Universiti Teknologi MARA, Pahang > Jengka Campus |
| Journal or Publication Title: | STSS 2004 |
| Event Title: | STSS 2004 : SAINS TEKNOLOGI JILID 1 |
| Event Dates: | 31 MEI – 1 JUN 2004 |
| Page Range: | pp. 177-181 |
| Keywords: | Hydrogen sensor, Time response, High temperature, Schottky diode |
| Date: | 2004 |
| URI: | https://ir.uitm.edu.my/id/eprint/50515 |
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