Study the effect of deposition parameter on the preparation of ZnO thin films by using dip-coating technique / Nor Zaity Zakaria

Zinc oxide (ZnO) thin films has attracted many research on it due to it interesting properties such as higher exciton binding energy (60 meV) and also it's potential application in electronic devices, optoelectronic devices, solar cells, cosmetics and so on. In this research, the objectives of this experiment are to determine the parameter on the preparation of ZnO thin films, to produce ZnO thin films by using dip-coating technique and also to determine the structural and the optical properties of ZnO thin films. To produce ZnO thin films, the silicon substrate was used to deposit ZnO thin film and was immersed in the sol-gel solution for 30 seconds. The speed of the dip coater was varied. Then the samples were heat at 180°C for 15 minutes. And then the samples were annealed at 600°C for 1 hour. After that, the ZnO thin film was characterized using Photoluminescence Spectrometer, and Scanning Electron Spectrometer. The photoluminescence result show the ultra-violet(UV) emission at 380nm which is near band edge emission peak and the green -yellow emission band which is at 450nm-500nm. The scanning electron microscope shows the distribution of grains and also the size of the particle. The sample at withdrawal speed at 300mm/min shows the most uniform distribution of grains.