Investigation of insulator oxidation type and thickness on the capacitor electrical characteristic / Mohd Nashriq Shauket Mohd Nasir

Mohd Nasir, Mohd Nashriq Shauket (2010) Investigation of insulator oxidation type and thickness on the capacitor electrical characteristic / Mohd Nashriq Shauket Mohd Nasir. [Student Project] (Unpublished)

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Abstract

MOS capacitors with Si02 and various thickness of insulator (dielectric) layer were fabricated and characterized. Si02 films were physical characterized by F20 Thin Film Analyzer, Four Point Probe. Capacitance-voltage measurements were utilized to obtain, the effective dielectric constant, effective oxide thickness, threshold voltage, interface quality, flatband voltage and sheet resistance. Theoretical and experimental studies on MOS capacitor built on p-type Si substrates with different Si02 thickness (1000 A, 2000 A, 3000 A, 4000 A), have been carried out by wet and dry oxidation. The oxide capacitance and electrical properties are determined to be a function of both the oxide thickness and at fixed gate area. Results shows that dry oxidation produce high quality of insulator layer than wet oxidation. As oxide thickness increased, threshold and flatband voltage increased linearly.

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Item Type: Student Project
Creators:
Creators
Email
Mohd Nasir, Mohd Nashriq Shauket
UNSPECIFIED
Contributors:
Contribution
Name
Email / ID Num.
Thesis advisor
Zakaria, Azlan
UNSPECIFIED
Subjects: Q Science > QC Physics > Electricity and magnetism > Electricity
Q Science > QC Physics > Electricity and magnetism > Electricity > Electric current (General)
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Applied Sciences
Programme: Bachelor of Science (Hons.) Industrial Physics
Item ID: 48455
Uncontrolled Keywords: Dielectric thickness, Capacitance-Voltage measurement, Electrical properties of MOS capacitor, Oxide thickness variation
URI: https://ir.uitm.edu.my/id/eprint/48455

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