Investigation of insulator oxidation type and thickness on the capacitor electrical characteristic / Mohd Nashriq Shauket Mohd Nasir

MOS capacitors with Si02 and various thickness of insulator (dielectric) layer were fabricated and characterized. Si02 films were physical characterized by F20 Thin Film Analyzer, Four Point Probe. Capacitance-voltage measurements were utilized to obtain, the effective dielectric constant, effective oxide thickness, threshold voltage, interface quality, flatband voltage and sheet resistance. Theoretical and experimental studies on MOS capacitor built on p-type Si substrates with different Si02 thickness (1000 A, 2000 A, 3000 A, 4000 A), have been carried out by wet and dry oxidation. The oxide capacitance and electrical properties are determined to be a function of both the oxide thickness and at fixed gate area. Results shows that dry oxidation produce high quality of insulator layer than wet oxidation. As oxide thickness increased, threshold and flatband voltage increased linearly.