Holes mobility enhancement using strained silicon, SiGe technology / Ahmad Sabirin Zoolfakar and Hashimah Hashim

Zoolfakar, Ahmad Sabirin and Hashim, Hashimah (2009) Holes mobility enhancement using strained silicon, SiGe technology / Ahmad Sabirin Zoolfakar and Hashimah Hashim. [Research Reports] (Unpublished)

Abstract

In this project, the hole mobility enhancement of PMOS are studied using SiGe technology. Silicon Germanium (SiGe) are used to increase drive current or hole mobility in the drain and source region. The performance improvements of devices with a gate length of 0.9 urn, 0.8 \im and 0.7 \im were considered. The first part of this project is reviewed about the effect of using SiGe in PMOS process to calculate the mobility. 100% of mobility enhancement using SiGe was observed compared to conventional PMOS SiGe. The second part covers the characteristics for variation of SiGe thickness. Therefore, using SiGe is an efficient method for improving PMOS device performance.

Metadata

Item Type: Research Reports
Creators:
Creators
Email / ID Num.
Zoolfakar, Ahmad Sabirin
UNSPECIFIED
Hashim, Hashimah
UNSPECIFIED
Subjects: Q Science > QC Physics > Electricity and magnetism > Electricity
T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electric apparatus and materials. Electric circuits. Electric networks
Divisions: Universiti Teknologi MARA, Shah Alam > Research Management Centre (RMC) > Institute of Research, Development and Commercialization (IRDC)
Keywords: Hole mobility, Silicon Germanium (SiGe), PMOS process
Date: 2009
URI: https://ir.uitm.edu.my/id/eprint/47700
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