Effects of BaZrO3 doping on dielectric properties of CaCu3Ti4O12 (CCTO) ceramics / Noorilyani Harun.

The study of effects of BaZrO3 doped CaCu3Ti4O12 (CCTO) will carried out. From previous report shows that CaCu3Ti4O12 (CCTO) has been found to show that it has very high dielectric constant at room temperature. This characteristic makes it potentially useful for important applications in microelectronics and memory devices. However, the dielectric loss of material is become less useable. According to this problem, this project BaZrO3 doped CCTO to lower the dielectric loss. The BaZrO3 doped CCTO was prepared by using solid state reaction method. X-ray diffractometer is employed to determine phase of compound of the samples. From the result, for doped samples exhibit two phases which expected CCTO phases and BaZrO3 phases. The Electrical Impedance Spectroscopy (EIS) is used to measured electrical behaviour of each sample. The doping of BaZrO3 on CCTO was reduced their dielectric loss below 0.1 beyond 100 Hz due to increasing in grain boundary resistivity followed by Internal Barrier Layer Capacitance (IBLC) Model. The decreasing electric constant of doping samples still high which the value drop from 5,910 to 2,688 at 100 Hz due to the effect of the different of large dielectric constant of doping (BaZrO3) and the CCTO.