The effect of aluminum (Al) foil sizes during metallization process for PN junction fabrication / Firdaus Farhan Zainal Abidin

This project is done to obtain the effect of aluminum foil sizes during the metallization process for p-n junction fabrication. The p-n junction is a basic semiconductor device which contains p-type and n-type material. Metallization is one of the crucial processes in order to obtain a good and reliable contact in the semiconductor devices. This process is an adding process that deposit metal layers on the wafer surface. In this project, Si (100) p-type wafer is used as the based material of this p-n junction device. Aluminum is widely used as the material to fabricate the conducting lines for the transportation of the electrical power. Since the metallization is important in the semiconductor fabrication; this project is done to determine the effect of various aluminum foil sizes on the p-n junction in order to produce the ideal metallization. Basic process such as oxidation, lithography, diffusion and metallization would be done through the whole fabrication process. After the fabrication is done and complete, the ideal p-n junction is the sample with the 5x3 cm Al foil size. This sample has the ON voltage of 0.8 V and resistance of 441 Q. The measurement of resistance and ON voltage was calculated using the I-V measurement and the thickness of the Al layer is calculated to be 3492 A by using the surface profiler.