Characterization of nitrogen doped amorphous carbon thin film using natural precursor / Saifullizan Saidon

Saidon, Saifullizan (2013) Characterization of nitrogen doped amorphous carbon thin film using natural precursor / Saifullizan Saidon. [Student Project] (Unpublished)


This reports present on the deposition of semiconducting amorphous carbon (a-C) films fabricated onto the glass substrate and n-type silicon by Thermal Chemical Vapour Deposition (CVD) using natural source of camphoric carbon as the precursor material. Those samples were deposited . at different flow rates of Argon and Nitrogen gases which both are varies with flow rates of 10, 15, 20, 25, 30, 35sccm. The thickness of thin film was measured by using Surface Profiler. From the characterization of the electrical properties using current-voltage (I-V) measurement, I-V graph was modelled for both conditions. The optical properties of thin film were measured by UV-VIS-NIR Spectrophotometer under the visible range. The structural properties of these films have been characterized by using Raman Spectroscopy and Atomic Force Microscope (AFM). There are significant changes in conductivity (dark and illumination), optical bandgap and structural properties when the flow rate was varied.. For undoped amorphous carbon, the 15 seem samples give the optimum value of conductivity, absorption coefficient, and Raman intensity ratio and have V narrow band gap. While, for the Nitrogen doped amorphous carbon, the 30sccm sample give the highest value of conductivity, optimum absorption coefficient, optimum Raman intensity ratio and lowest bandgap.


Item Type: Student Project
Email / ID Num.
Saidon, Saifullizan
Email / ID Num.
Thesis advisor
Mohd Noor, Uzer
Subjects: Q Science > QC Physics > Descriptive and experimental mechanics
Q Science > QC Physics > Electricity and magnetism > Electricity
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Applied Sciences
Programme: Degree of Bachelor of Science (Hons.) Industrial Physics
Keywords: amorphous, nitrogen, precursor
Date: July 2013
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