Deposition of zinc oxide on N-type silicon wafer / Nur Zalikha Kamarul Zamri

ZnO was produced by using sol-gel spin coating methods. Zn sol was prepared by dissolved Zn (N03)2 in absolute C2H5OH. Then, the mixture was stirred until form homogeneous solution. There are several processes needed in substrate preparation. The wafer was cleaned by immersed it into BOE to remove any contaminants on the surface. Then, Al was deposited into the surface by using PVD as an electrical contact. Next, wax was used and applies it at all edge of the wafer as a shielding during coated Zn sol on the wafer by using spin coating. After that, sample was annealed at different temperature which is 280 °C, 290 °C and 300 °C. The surface morphology, chemical composition and electrical junction ZnO thin film grown was characterized by using SEM, EDX analysis and I-V characteristic. From the SEM analysis, the ZnO thin film was formed smooth surface at temperature 280 °C. At this temperature, EDX analysis was showed that it was detected only ZnO layer, therefore ZnO thin film at this time is thicker compared to other annealing temperature and no impurities appear. However, ZnO thin film grown at 290 °C and 300 °C produced very thin layer because electromagnetic radiation can penetrate until to the Si surface. From the I-V characterization, all ZnO thin film performed as a diode since it is as I-V characteristics of P-N junction diode.