Effects of cr substitution at ti-site on dielectric properties of cacu3ti4012 (ccto) / Syamimi Muhamad

The study of effect of Cr substitute at Ti-Site on CaCu3TL}Oi2 CCTO will be carried out. From previous report shows that CaCu3Ti4O12 CCTO has been found to show that it has very high dielectric constant at room temperature. This characteristic makes it potentially useful for important applications in microelectronics and memory devices. However, the dielectric loss of material is become less useable. According to this problem, this project Cr substitute at Ti-Site on CaCu3Ti4O12 CCTO to lower the dielectric loss. The Cr substitute at Ti-Site on CCTO was prepared by using solid state reaction method. The Cr substitute at Ti-Site on CCTO, calcining at 1000°C for 12 hours, grinding and pellet pressing, and then sintered in air at 1100°C for 24 hours. The microstructure ofthe sample will be investigated by using Scanning Electron Microscope (SEM). From the microstructure, it shows that when the substitution of Cr at Ti-site was increasedfrompure to x=0.50, it can be seen that the grain size become much smaller. X-ray diffractometer is employed to determine phase of compound of the samples. From the result, it is single phase and the sample is crystalline. The Electrical Impedance Spectroscopy (EIS) is used to measure electrical behavior of each sample. The substitution of Cr at Ti-site on CCTO was improved their dielectric constant and dielectric properties.