Effect of annealing temperature and time on boron and phosphorus spin-on dopant in n-type silicon wafer / Nor Aisyah Jamaluddin

In this study, N-type silicon wafer is doped with Boron dopant and Phosphorus dopant. Both of doping process is using spin-on dopant. The effect of annealing temperature and time is studied between Boron-doped silicon wafer with Phosphorus-doped silicon wafer. The annealing time will be fixed at 60 minutes when the annealing temperature is varied at 750°C, 850°C, 950°Cand also 1050°C. The same applies when the annealing temperature is fixed at 900°C, the time is varied at 60 minutes, 75 minutes, 90 minutes and also 105 minutes. Other parameters that had been fixed is spin-coat speed and time; at 1300 rpm for 20 seconds and also volume of dopant;1.3 ml in order to compare the sheet resistivity base on variables of annealing times and temperature only. After annealing process via diffusion module, the sheet resistivity will be measured using four point probe. Many points of testing were taken from each wafer for more accuracy. Data of sheet resistivity versus number of points is plotted into graphs and had been compared between dopant of Boron and Phosphorus and also different times of annealing and different temperatures of annealing. Phosphorus dopant on N-type silicon wafer had shown more reliable conductivity rather than Boron dopant on N-type silicon. Resistivity of Boron dopant on N-type shows high sensitivity from time of annealing and result in unpredictable resistivity.