Abstract
Sol gel method for the preparation of Zr02 thin film using zirconium oxychloride as the starting precursor. Thin films were deposited using dip-coating method onto silicon wafer and glass substrate. The dip-coating rate was varied from lOmm/min to 40 mm/min to obtain the exact thickness of 71.5 nm as one-quarter wavelength. The surface morphology, crystalline structure, optical properties, thickness and refractive index of Zr02 thin film were investigated by using AFM, XRD, Uv-Vis, Surface Profiler and Prism Coupler measurement. The average surface roughness of Zr0>₂ thin film is about 2 nm respectively. The films present a tetragonal phase for annealing temperature 500°c. A large percent of transmission approximately 90% was present for fast dip-coating rate and very low dip-coating rate have percentage of transmission below 70%. At the dip-coating rate lOmm/min, the exact thickness of 72 nm was achieved. However, the crack formation of one layer of ZrC0₂ thin film was observed. Refractive index that characterize by prism coupler using wavelength, λ = 632nm give high refractive index for Zr0₂ (2.07 -2.15).
Metadata
Item Type: | Student Project |
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Creators: | Creators Email / ID Num. Subari, Noor Fariza UNSPECIFIED |
Contributors: | Contribution Name Email / ID Num. UNSPECIFIED Abdul Rahman, Mohd Kamil UNSPECIFIED |
Subjects: | Q Science > QC Physics > Electricity and magnetism > Dielectrics |
Divisions: | Universiti Teknologi MARA, Shah Alam > Faculty of Applied Sciences |
Programme: | Bachelor of Science (Hons.) Physics |
Keywords: | Sol-gel technique, Dip-coating thin films, Zirconium oxide (Zr0₂), Refractive index |
Date: | 2011 |
URI: | https://ir.uitm.edu.my/id/eprint/44541 |
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