Comparison of single step annealing, double step annealing and multistep annealing for oxide growth on silicon by using dry oxidation techniques / Muhamad Zaki Abdul Khalik

The oxide layer grown on silicon, or silicon dioxide (Si02), was important and played a crucial role in the development of semiconductor fabrication. Thermal oxidation was a method to produce a layer of oxide (usually Si02) on the surface of a wafer. This technique forced an oxidizing agent to diffuse into the wafer at high temperature and react with it. The rate of oxide growth can be predicted by the Deal-Grove Model. In this project, the dry thermal oxidation process was studied as the technique of diffusing the oxidizing agent. The thickness of Si02 layer can grow by using single step oxidation, double step oxidation and multiple step oxidation method. Flimetrics is used to measure the thickness silicon dioxide layer that grown.