The study of electrical properties of porous silicon nanostructure / Halim Ahmad

Porous Silicon (PSi) nanostructure have been formed by anodically etching polished p-type [100] CZ silicon wafer with 4-8 ohm resistivity in a 1:1 ratio of Hydrofluoric and Ethanol solution. The effect of varied time of preparation parameters of PSi on its electrical properties, optical properties and chemical properties was determined from the Current-Voltage characterization, Photoluminescence spectroscopy and Fourier transform infrared spectroscopy (FTIR). The as prepared sample was determined its optical properties and chemical properties. After that it will make into a diode like structure to determine its electrical properties. The results show that the photoluminescence of the PSi shift to shorter wavelength as the preparation parameters is optimized. The resistance and resistivity of the PSi also shows better results as expected by the theory when increasing the time of etching. The importance of understanding the role of preparation parameters of Porous Silicon is significant in accordance to obtain better results in future fabricating semiconductor devices.