Effect of time on formation Silicon Dioxide layer and characterization / Azliza Ali Yusuf

Nowadays, Silicon Dioxide is very important for making integrated circuits and other devices. Its thickness also plays important role to characterize the device. Hence, this study is to investigate how the effect of time on the forming of the silicon dioxide layer. For this study, the silicon dioxide had formed by using dry thermal oxidation process. This process is useful to growth the silicon dioxide and its ability to produce more uniform and denser thermal oxide compared to the other process. Then, spectrophotometer had used to characterize the silicon dioxide layer. This tool examines the oxide thickness characterization (dependent variable) at different time intervals (independent variable). The hypotheses that had built for this project is the oxide thickness growth has linear relationship with time and also its growth have the uniform thickness. These hypotheses are actually based on the theory that related to this study. The result of this study shown that the oxide thickness had growth has linear relationship with time. This study also found that the silicon dioxide is not growth with uniformly.