An overview to chip-based power transistor and prognostics techniques / Muhamad Hazwan Abdul Halim … [et al.]

Abdul Halim, Muhamad Hazwan and Buniyamin, Norlida and N., Naoe and A., Imazawa and Rosman, M. Syafiq (2020) An overview to chip-based power transistor and prognostics techniques / Muhamad Hazwan Abdul Halim … [et al.]. Journal of Electrical and Electronic Systems Research (JEESR), 16. pp. 19-27. ISSN 1985-5389

Abstract

Power ratings and switching capability have been the main performance characteristics in the development of power transistors. To safely secure the performance reliability of its operation, a prognostics study for power transistor was introduced. The prognostics of power transistors enable the assessment of its health condition and prediction of remaining useful lifetime (RUL), given the current characteristics and loading condition. This paper presents the classification of smallsignal transistor and power transistor, and the applications of power transistors. Three types of prognostics method: Model-driven, Data-driven and Hybrid method are summarized and compared. Subsequently, a new prognostics methodology for RUL prediction of power MOSFET due to active and passive thermal stress is proposed. The proposed method is based on the data-driven methodology that will utilize the characteristics of voids, and ON-State resistance, Rds,on as input for the proposed algorithm. The algorithm will be termed as RULPOV (Remaining Useful Life Prediction based on Voids). The proposed method is expected to improve the RUL prediction as well as to minimize the reliance on junction temperature measurement.

Metadata

Item Type: Article
Creators:
Creators
Email / ID Num.
Abdul Halim, Muhamad Hazwan
mhazwan@neptune.kanazawa-it.ac.jp
Buniyamin, Norlida
nbuniyamin@uitm.edu.my
N., Naoe
naoe@neptune.kanazawa-it.ac.jp
A., Imazawa
Rosman msyafiqr@gmail.com
Rosman, M. Syafiq
msyafiqr@gmail.com
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics
T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics > Apparatus and materials
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Journal or Publication Title: Journal of Electrical and Electronic Systems Research (JEESR)
UiTM Journal Collections: UiTM Journal > Journal of Electrical and Electronic Systems Research (JEESR)
ISSN: 1985-5389
Volume: 16
Page Range: pp. 19-27
Keywords: Small-signal MOSFET, Power MOSFET, Prognostics, Model-driven, Data-driven, Failure mechanism, Failure precursor
Date: 2020
URI: https://ir.uitm.edu.my/id/eprint/42155
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