Abstract
In this research work, ZnO nanostructure films were prepared and the effects of Solvent
vapor annealing (SVA) was studied for its UV sensors applications. ZnO nanostructure
films were deposited on the pre - patterned ITO substrates by sol - gel spin coating
method. SVA was varied at various times (0, 10, 30 and 60 min) and annealed at 500 'C
for 1 hour. The top view of the pre - patterned ITO was scanned using a profilometer. In
this research, pixel 3 was used to characterize the performance of electrical properties and
photoresponse of ZnO nanostructure films under UV illumination. The performance of
ZnO nanostructure films with various time SVA was characterized using a source measure
unit (SMU). I - V curve of ZnO nanostructure films was recorded under the illumination
of a 254 nm UV lamp. For all characterization, ZnO nanostructure films with 10 minutes
expose to SVA has good performance in electrical properties. It also shows stable and
good response time compared to the other samples. For sensitivity and responsivity, ZnO
nanostructure films 10 minutes expose to SVA has higher sensitivity which is 7.31 and
higher responsivity which is 5.78 µAW-1
Metadata
Item Type: | Student Project |
---|---|
Creators: | Creators Email / ID Num. Mohd Johari, Siti Nurul 'Afini UNSPECIFIED |
Subjects: | Q Science > QD Chemistry > Inorganic chemistry Q Science > QD Chemistry > Physical and theoretical chemistry Q Science > QD Chemistry > Physical and theoretical chemistry > Photochemistry |
Divisions: | Universiti Teknologi MARA, Pahang > Jengka Campus > Faculty of Applied Sciences |
Programme: | Bachelor of Science (HONS.) Physics |
Keywords: | Chemistry, Inorganic, Photochemistry, Electrical |
Date: | January 2020 |
URI: | https://ir.uitm.edu.my/id/eprint/41752 |
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