Effect of EDX accelerating voltage on ZnO thin film doped with sodium / Benedict Wen Cheun Au ... [et al.]

Wen, Benedict Cheun Au and Kah, Yoong Chan and Siow, Woon Ng and Fong, Kwong Yam (2018) Effect of EDX accelerating voltage on ZnO thin film doped with sodium / Benedict Wen Cheun Au ... [et al.]. Gading Journal for Science and Technology, 1 (1). pp. 1-6. ISSN 2637-0018


In recent years, owing to its unique properties, ZnO has been researched extensively for a wide range of applications including sensors, transistors and solar cells. In this work, ZnO thin film doped with sodium (ZnO:Na) was characterized using Field Emission-Scanning Electron Microscopy (FESEM) and Energy Dispersive X-Ray Spectroscopy (EDX). The FESEM image of the ZnO:Na film implies crystal growth at different orientations. The surface composition of the ZnO :Na film with approximately 350 nm thickness was investigated by EDX as a function of accelerating voltage ranging from 5 kV to 15 kV. The EDX spectra revealed that 7 kV is the most appropriate accelerating voltage for extracting elemental composition of the ZnO:Na films, which exclude the detection of the underlying substrate elements. A rectifying structure made up of P-type ZnO :Na film and N-type tin doped indium oxide (ITO) film showed typical rectifying characteristic.


Item Type: Article
Email / ID Num.
Wen, Benedict Cheun Au
Kah, Yoong Chan
Siow, Woon Ng
Fong, Kwong Yam
Subjects: Q Science > QC Physics > Heat > Temperature
T Technology > T Technology (General)
T Technology > TP Chemical technology
Divisions: Universiti Teknologi MARA, Pahang > Jengka Campus
Journal or Publication Title: Gading Journal for Science and Technology
UiTM Journal Collections: UiTM Journal > Gading Journal of Science and Technology (GADINGS&T)
ISSN: 2637-0018
Volume: 1
Number: 1
Page Range: pp. 1-6
Keywords: P-type ZnO:Na film, EDX accelerating voltage, FESEM, rectifying structure
Date: 2018
URI: https://ir.uitm.edu.my/id/eprint/31335
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