Abstract
ZnO nanostructures are extensively studied due to their attractive characteristics and behaviour with wide band gap (3.4 eV) and large exciton binding energy (60 meV) Recently, there have been a lot of interests in studying modified ZnO nanostructures. The prospect of magnetically controlled operation of semiconductor devices has provoked intensive research to develop transition metal doped wide-band-gap semiconductors,i.e. diluted magnetic semiconductors (DMS) with room temperature ferromagnetism. Among transition metals, Cu is an especially interesting dopant because that Cu-related compounds are not strongly ferromagnetic. Transition metal-doped ZnO offers the potential for realizing room temperature operation of active spintronic devices as well as rich and fascinating fundamental physics…
Metadata
Item Type: | Research Reports |
---|---|
Creators: | Creators Email / ID Num. Ahmad Kamil, Suraya UNSPECIFIED Kamarulzaman, Che Norlida UNSPECIFIED Mahat, Annie Maria UNSPECIFIED Mustaffa, Nur Amalina UNSPECIFIED |
Subjects: | Q Science > QC Physics > Atomic physics. Constitution and properties of matter > Nanostructures Q Science > QC Physics > Nuclear and particle physics. Atomic energy. Radioactivity > Elementary particle physics |
Divisions: | Universiti Teknologi MARA, Shah Alam > Research Management Centre (RMC) |
Keywords: | Bandgap energies; Single phase Zn(₁₋ₓ)CuₓO, Nanoparticles |
Date: | 2012 |
URI: | https://ir.uitm.edu.my/id/eprint/24844 |
Download
![[thumbnail of LP_SURAYA AHMAD KAMIL RMI 12_5.pdf]](https://ir.uitm.edu.my/style/images/fileicons/text.png)
LP_SURAYA AHMAD KAMIL RMI 12_5.pdf
Download (7MB)
Digital Copy
Physical Copy

ID Number
24844
Indexing

